Generation of a multi-qubit W entangled state through spatially separated semiconductor quantum-dot-molecules in cavity-quantum electrodynamics arrays
Creators
- 1. School of Physics and Electronic Engineering, Hubei University of Arts and Science, Xiangyang 441053 (China)
- 2. Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)
- 3. Wuhan Institute of Technology, School of Science, Hubei Province Key Laboratory of Intelligent Robot, Wuhan 430073 (China)
- 4. Key Laboratory of Fundamental Physical Quantities Measurement of Ministry of Education, Wuhan 430074 (China)
Description
Generating entangled states attract tremendous interest as the most vivid manifestation of nonlocality of quantum mechanics and also for emerging applications in quantum information processing (QIP). Here, we propose theoretically a scheme for the deterministic generation of a three-qubit W sate with three semiconductor quantum-dot-molecules (QDMs) trapped in spatially separated cavities connected by optical fibers. The proposed scheme takes full advantage of the voltage-controlled tunnelling effects in QDMs, which induces the quantum coherence and further controls the generation of the W entangled state. The influences of the system parameters and various decoherence processes including spontaneous decay and photon leakage on the fidelity of the W state are discussed in details. Numerical results indicate that our scheme is not only robust against these decoherence factors but also insensitive to the deviation of the system parameters from the ideal conditions. Furthermore, the present scheme can be directly extended to realize an N-qubit W state. Also, this scheme can be generically transferred to other physical systems, including circuit quantum electrodynamics and photonic crystal cavities. The results obtained here may be useful in real experiments for realizing QIP in a solid-state platform
Additional details
Identifiers
- DOI
- 10.1063/1.4870450;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 115
- Journal Issue
- 13
- Journal Page Range
- p. 134312-134312.8
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45094911
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CAVITY RESONATORS; CRYSTALS; ELECTRIC POTENTIAL; MOLECULES; OPTICAL FIBERS; PHOTONS; QUANTUM DOTS; QUANTUM ELECTRODYNAMICS; QUANTUM ENTANGLEMENT; QUANTUM MECHANICS; QUANTUM STATES; QUBITS; SEMICONDUCTOR MATERIALS; SOLIDS; TRAPPING; TUNNEL EFFECT
- Descriptors DEC
- BOSONS; ELECTRODYNAMICS; ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; EQUIPMENT; FIBERS; FIELD THEORIES; INFORMATION; MASSLESS PARTICLES; MATERIALS; MECHANICS; NANOSTRUCTURES; QUANTUM FIELD THEORY; QUANTUM INFORMATION; RESONATORS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC