Published July 1, 2019 | Version v1
Journal article

Performance of the FBK/INFN/LPNHE thin active edge pixel detectors for the upgrade of the ATLAS Inner Tracker

  • 1. Laboratoire de Physique Nucleaire et de Hautes Energies (LPNHE), 4 Place Jussieu, 75005 Paris (France)
  • 2. Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) and TIPFA INFN, Via Sommarive 18, 38123 Trento (Italy)
  • 3. Università di Trieste, Dipartimento di Fisica and INFN, 34127 Trieste (Italy)
  • 4. University of Trento and TIFPA INFN, Via Sommarive 9, 38123 Trento (Italy)
  • 5. INFN Genova, via Dodecaneso 33, 16146 Genova (Italy)
  • 6. Brookhaven National Laboratory, Upton, New York 11973 (United States)

Description

In view of the LHC upgrade phase towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system.The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of thin (100 and 130 μm thick) and edgeless n-on-p planar pixel sensors produced by FBK-CMM. The production featured standard 50 μm × 250 μm pixel-pitch modules, compatible with the ATLAS FE-I4B readout chip, and small 50 μm × 50 μm and 25 μm × 100 μm pixel-pitch modules, compatible with the RD53A readout chip prototype. After discussing the sensor technology, an overview of 2018 testbeam results of the produced devices will be given, before and after irradiation, with a special focus on the hit efficiency at the detector edge.

Availability note (English)

Available from http://dx.doi.org/10.1088/1748-0221/14/07/C07001

Additional details

Publishing Information

Journal Title
Journal of Instrumentation
Journal Volume
14
Journal Issue
07
Journal Page Range
p. C07001
ISSN
1748-0221