Published February 1990
| Version v1
Journal article
Suppression and elimination of secondary defects in silicon implanted with MeV energetic B+ ions
- 1. Beijing Normal Univ., BJ (China). Inst. of Low Energy Nuclear Physics
Description
Thermal annealing behavior of secondary defects in silicon implanted with MeV energetic boron ions has been studied. The authors suggest a new type of enhanced annealing effect of double implantation, which can be used effectively to suppress or eliminate the secondary defects in such implanted silicon samples. The physical mechanism of the suppression and elimination processes is discussed
Additional details
Publishing Information
- Journal Title
- Acta Physica Sinica
- Journal Volume
- 39
- Journal Issue
- 2
- Series
- Acta Phys. Sin.
- Journal Page Range
- 254-260
- ISSN
- 1000-3290
- CODEN
- WLHPA
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 22081941
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ANNEALING; BORON IONS; CANCELLATION; CRYSTAL DEFECTS; EXPERIMENTAL DATA; INHIBITION; ION IMPLANTATION; MEV RANGE; SILICON; TRANSMISSION ELECTRON MICROSCO
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL STRUCTURE; DATA; ELECTRON MICROSCOPY; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; INFORMATION; IONS; MICROSCOPY; NUMERICAL DATA; SEMIMETALS