Published January 15, 2010
| Version v1
Journal article
Preparation and characterizations of amorphous nanostructured SiC thin films by low energy pulsed laser deposition
- 1. Yousef Jameel Science and Technology Research Center (YJ-STRC), The American University in Cairo, Cairo (Egypt)
- 2. Department of Physics, The American University in Cairo, Cairo (Egypt)
- 3. Department of Mechanical Engineering, The American University in Cairo, Cairo (Egypt)
- 4. Department of Applied Chemistry, Faculty of Science, Al-Azhar University Cairo, Cairo (Egypt)
Description
Amorphous silicon carbide (SiC) thin films were deposited on silicon substrates by pulsed laser ablation at room temperature. Thicknesses and surface morphology of the thin films were characterized using optical profilers, atomic force and field emission scanning electron microscopy. Nanohardnes, modulus and scratch resistance properties were determined using XP nanoindenter. The results show that crack free, smooth and nanostructured thin films can be deposited using low laser energy densities.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2009.09.047Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2009.09.047;
- PII
- S0169-4332(09)01326-9;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 256
- Journal Issue
- 7
- Journal Page Range
- p. 2056-2060
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44018444
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABLATION; AMORPHOUS STATE; ENERGY BEAM DEPOSITION; ENERGY DENSITY; FIELD EMISSION; LASER RADIATION; NANOSTRUCTURES; PULSED IRRADIATION; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON CARBIDES; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; THICKNESS; THIN FILMS
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; DEPOSITION; DIMENSIONS; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; FILMS; IRRADIATION; MICROSCOPY; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS; SURFACE COATING; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.