Published August 2015
| Version v1
Journal article
Comparison of electronic structure between monolayer silicenes on Ag (111)
- 1. Department of Advanced Materials Science, Graduate School of Frontier Science, The University of Tokyo, 5-1-5 Kashiwa, Chiba 277-8561 (Japan)
- 2. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Ibaraki 304-0044 (Japan)
Description
The electronic structures of monolayer silicenes (4 × 4 and ) grown on Ag (111) surface are studied by scanning tunneling spectroscopy (STS) and density functional theory (DFT) calculations. While both phases have similar electronic structures around the Fermi level, significant differences are observed in the higher energy unoccupied states. The DFT calculations show that the contributions of Si 3pz orbitals to the unoccupied states are different because of their different buckled configurations. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/24/8/087307Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 24
- Journal Issue
- 8
- Journal Page Range
- [5 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47100806
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; CRYSTAL GROWTH; DENSITY FUNCTIONAL METHOD; ELECTRONIC STRUCTURE; SILICENE; SILVER; SPECTROSCOPY; TUNNEL EFFECT
- Descriptors DEC
- CALCULATION METHODS; ELEMENTS; EVALUATION; METALS; SEMIMETALS; SILICON; TRANSITION ELEMENTS; VARIATIONAL METHODS