Influences of channel metallic composition on indium zinc oxide thin-film transistor performance

Indium zinc oxide thin-film transistors were fabricated with a semiconductor channel layer deposited via pulsed plasma deposition. Influences of the channel metallic composition on devices' performance were investigated. While the Zn percentage molar content, calculated as Zn/(Zn+In), varied from 40% to 60%, the threshold voltage of the devices positively increased by 2.5 V and field-effect mobility was not evidently influenced. Diversity of specimens on field-effect mobility was attributed to chemical state variation of oxygen in the oxide channel layer