Published May 31, 2006 | Version v1
Journal article

Entanglement between static and flying qubits in a semiconducting carbon nanotube

  • 1. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom)
  • 2. QinetiQ, St Andrews Road, Malvern WR14 3PS (United Kingdom)
  • 3. Department of Physics, Ben-Gurion University of the Negev, Beer Sheva 84105 (Israel)
  • 4. Faculty of Mathematics and Physics, University of Ljubljana, J. Stefan Institute, 1000 Ljubljana (Slovenia)

Description

Entanglement can be generated by two electrons in a spin-zero state on a semiconducting single-walled carbon nanotube. The two electrons, one weakly bound in a shallow well in the conduction band, and the other injected into the conduction band, are coupled by the Coulomb interaction. Both transmission and entanglement are dependent on the well characteristics, which can be controlled by a local gate, and on the kinetic energy of the injected electron. Regimes with different degrees of electron correlation exhibit full or partial entanglement. In the latter case, the maximum entanglement can be estimated as a function of width and separation of a pair of singlet-triplet resonances

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/18/S851/cm6_21_S11.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
18
Journal Issue
21
Journal Page Range
p. S851-S866
ISSN
0953-8984
CODEN
JCOMEL