Published March 2017 | Version v1
Journal article

Growth behavior of Bi2Te3 and Sb2Te3 thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition

  • 1. School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of)
  • 2. Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of)
  • 3. School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of)

Description

A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi2Te3 and Sb2Te3 thin films was carried out. Obvious microstructural discrepancy in both the as-deposited Bi2Te3 and Sb2Te3 thin films was observed when grown on graphene or SiO2/Si substrate. Bi2Te3 and Sb2Te3 thin films deposited on the graphene substrate were observed to be grown epitaxially along c-axis and show very smooth surface compared to that on SiO2/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssr.201600369

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. Rapid Research Letters (Online)
Journal Volume
11
Journal Issue
3
Journal Page Range
p. 1-4
ISSN
1862-6270
CODEN
PSSRCS

Optional Information

Notes
With 4 figs.