Published October 2006 | Version v1
Journal article

Properties of MgB2 thick film on silicon carbide substrate

  • 1. Department of Physics and State Key Laboratory for Artificial Structure and Mesoscopic Physics, Peking University, Beijing 100871(China)

Description

We have successfully synthesized MgB2 thick films on 4H-SiC substrate by hybrid physical-chemical deposition (HPCVD). The films have transition temperature Tc above 40 K. X-ray diffraction (XRD) shows the c-axis oriented structure of MgB2, with Mg and small MgO impurities. The critical current density Jc, estimated using the measured magnetic hysteresis loop and the Bean model, is 6 MA cm-2 in self-field at 10 K

Availability note (English)

Available online at http://stacks.iop.org/0953-2048/19/1073/sust6_10_015.pdf or at the Web site for the journal Superconductor Science and Technology (ISSN 1361-6668) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Superconductor Science and Technology
Journal Volume
19
Journal Issue
10
Journal Page Range
p. 1073-1075
ISSN
0953-2048
CODEN
SUSTEF