Published June 7, 2004 | Version v1
Journal article Metadata-only

Material modifications induced by laser annealing in two-dimensional structures

Creators

  • 1. STMicroelectronics, Stradale Primosole 50, I-95121 Catania (Italy)
  • 2. CNR-IFN Sezione Roma, Via Cineto Romano 42, 00156 Rome (Italy)
  • 3. CNR-IMM Sezione Catania, Stradale Primosole 50, I-95121 Catania (Italy)

Description

The effects of the laser irradiation on metal-oxide-semiconductor structures are investigated by means of a phase-field methodology. We numerically solved the model equations in one- and two-dimensional structures also containing SiO2/amorphous-Si/crystalline-Si stacks. The simulated laser annealing processes are discussed in detail, pointing out the influence of the geometrical constraints on the irradiation effects in the samples. The simulation results are compared with the experimental two-dimensional delineation of dopant profiles. These comparisons show the importance of the joint theoretical and experimental investigations in order to fully understand the phenomena occurring in submicron sized laser irradiated structures

Additional details

Identifiers

DOI
10.1063/1.1759772;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
84
Journal Issue
23
Journal Page Range
p. 4738-4740
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36047740
Subject category
S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ANNEALING; COMPARATIVE EVALUATIONS; EQUATIONS; IRRADIATION; LASERS; MODIFICATIONS; NUMERICAL SOLUTION; ONE-DIMENSIONAL CALCULATIONS; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; TWO-DIMENSIONAL CALCULATIONS
Descriptors DEC
CHALCOGENIDES; ELEMENTS; EVALUATION; HEAT TREATMENTS; MATERIALS; MATHEMATICAL SOLUTIONS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS

Optional Information

Notes
(c) 2004 American Institute of Physics.