Published January 31, 2011 | Version v1
Journal article Metadata-only

Nitrogenated amorphous InGaZnO thin film transistor

Creators

  • 1. Department of Photonics and Display Institute, National Chiao Tung University, CPT Building, Room 412, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan (China)
  • 2. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

Description

This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process.

Additional details

Identifiers

DOI
10.1063/1.3551537;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
98
Journal Issue
5
Journal Page Range
p. 052102-052102.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42108919
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
AMORPHOUS STATE; ARGON; CARRIER MOBILITY; DEPOSITION; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LAYERS; NITROGEN; OXYGEN COMPOUNDS; RELIABILITY; SEMICONDUCTOR MATERIALS; SPUTTERING; STABILITY; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRANSISTORS; ZINC COMPOUNDS
Descriptors DEC
ELEMENTS; FILMS; FLUIDS; GASES; MATERIALS; MOBILITY; NONMETALS; RARE GASES; SEMICONDUCTOR DEVICES; TEMPERATURE RANGE

Optional Information

Notes
(c) 2011 American Institute of Physics