Published 1981 | Version v1
Book Metadata-only

Microstructure and sheet resistance of phosphorus-implanted annealed polycrystalline silicon films

Creators

  • 1. Siemens A.G., Muenchen (Germany, F.R.). Forschungslaboratorien

Description

LPCVD polycrystalline silicon films were phosphorus-implanted with doses of 2.5 x 1015 cm-2 and 2 x 1016 cm-2 and annealed at temperatures between 6000C and 10000C. Thin cross sections observed in the TEM showed recrystallization to proceed in the vertical direction before lateral grain growth occurs. Knowing the phosphorus depth distribution from the X-ray microanalysis of cross sections in a STEM, the variation in sheet resistance with temperature could be interpreted as the influence of the microstructure on the carrier concentration. (author)

Additional details

Publishing Information

Publisher
Institute of Physics.
Imprint Place
Bristol (UK)
ISBN
0 85498 151 9
Imprint Title
Microscopy of semiconducting materials, 1981
Imprint Pagination
464 p.
Journal Page Range
p. 283-288.

Conference

Title
Royal Microscopical Society Conference on microscopy of semiconducting materials.
Dates
6 - 10 Apr 1981.
Place
Oxford (UK).

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
14734727
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; DEPTH; ELECTRIC CONDUCTIVITY; ELECTRON MICROSCOPY; FILMS; GRAIN GROWTH; ION IMPLANTATION; MICROSTRUCTURE; PHOSPHORUS IONS; POLYCRYSTALS; RADIATION DOSES; RECRYSTALLIZATION; SILICON; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; CRYSTALS; DIMENSIONS; DISTRIBUTION; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; IONS; MICROSCOPY; PHYSICAL PROPERTIES; SEMIMETALS