Published June 1987
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Fine structure and energy spectrum of exciton in direct band gap cubic semiconductors with degenerate valence bands
- 1. International Centre for Theoretical Physics, Trieste (Italy)
- 2. Academy of Science of Vietnam, Hanoi (Vietnam). Inst. of Theoretical Physics
Description
The influence of the cubic structure on the energy spectrum of direct exciton is investigated, using the new method suggested by Nguyen Van Hieu and co-workers. Explicit expressions of the exciton energy levels 1S, 2S and 2P are derived. A comparison with the experiments and the other theory is done for ZnSe. (author). 10 refs, 1 fig., 2 tabs
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Additional details
Publishing Information
- Imprint Pagination
- 15 p.
- Report number
- IC--87/79
INIS
- Country of Publication
- International Atomic Energy Agency (IAEA)
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 19047738
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BAND THEORY; BINDING ENERGY; CUBIC LATTICES; ENERGY GAP; ENERGY SPECTRA; EXCITONS; FINE STRUCTURE; PERTURBATION THEORY; SEMICONDUCTOR MATERIALS; ZINC SELENIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ENERGY; MATERIALS; QUASI PARTICLES; SELENIDES; SELENIUM COMPOUNDS; SPECTRA; ZINC COMPOUNDS