Published February 2012
| Version v1
Journal article
Influence of defect formation as a result of incorporation of a Mn δ layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells
- 1. Lobachevsky State University of Nizhny Novgorod (Russian Federation)
Description
The influence of defect formation upon the deposition of a Mn δ layer and a GaAs coating layer (with the use of laser evaporation) on the photosensitivity spectra of heterostructures with InGaAs/GaAs quantum wells located in the near-surface region has been studied.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 46
- Journal Issue
- 2
- Journal Page Range
- p. 184-187
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43129423
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DEFECTS; DEPOSITION; EVAPORATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; LASERS; LAYERS; PHOTOSENSITIVITY; QUANTUM WELLS; SPECTRA; SURFACES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PHASE TRANSFORMATIONS; PNICTIDES; SENSITIVITY
Optional Information
- Copyright
- Copyright (c) 2012 Pleiades Publishing, Ltd.