Published March 2007 | Version v1
Journal article Metadata-only

About nature deep levels in semiconductors (in silicon)

Creators

  • 1. Tashkent State Technical University, Tashkent (Uzbekistan)

Description

In work the basic reason of a delay of wide application of the compensated material in manufacture and on the basis of the given complex researches is shown to ways of the decision of a problem of the compensated semiconductors. (author)

Additional details

Additional titles

Original title (Russian)
О природе глубоких уровней в кремнии

Publishing Information

Journal Title
Uzbekiston Respublikasi Fanlar Akademiyasining Maruzalari
Journal Issue
no.2
Journal Page Range
p. 21-23
ISSN
1019-8954

INIS

Country of Publication
Uzbekistan
Country of Input or Organization
Uzbekistan
INIS RN
39122849
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
E STATES; EDGE DISLOCATIONS; ELECTRON SPIN RESONANCE; FERMI LEVEL; HALL EFFECT; I CENTERS; MANGANESE; NANOSTRUCTURES; P STATES; P-TYPE CONDUCTORS; SCHOTTKY DEFECTS; SILICON
Descriptors DEC
COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISLOCATIONS; ELEMENTS; ENERGY LEVELS; INTERSTITIALS; LINE DEFECTS; MAGNETIC RESONANCE; MATERIALS; METALS; POINT DEFECTS; RESONANCE; SEMICONDUCTOR MATERIALS; SEMIMETALS; TRANSITION ELEMENTS; VACANCIES

Optional Information

Notes
11 refs., 3 figs., 1 tab.