Published 1996
| Version v1
Journal article
Stoichiometry control of compound semiconductor crystals. Pt. 1
Description
Effects of stoichiometry on various feature of III-V compounds are investigated. The application of the optimum vapour pressure of group V elements is shown to minimize the deviation from the stoichiometric composition. Temperature dependence of the optimum vapour pressure is also obtained from both the annealing and the liquid phase epitaxial (LPE) growth experiments. Vapour pressure technology is successfully applied to the bulk crystal growth. In view of the defect formation mechanism, role of stable interstitial As atoms (IAs) in GaAs is emphasized. (author). 40 refs, 26 figs
Additional details
Additional titles
- Augmented title (English)
- InP has been investigated
Publishing Information
- Journal Title
- Materialy Elektroniczne
- Journal Volume
- 24
- Journal Issue
- 4
- Journal Page Range
- p. 5-25.
- ISSN
- 0209-0058
- CODEN
- MAELDK
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 28072684
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL DEFECTS; CRYSTAL DOPING; CRYSTAL GROWTH METHODS; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; TELLURIUM
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ELEMENTS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMIMETALS