Published October 2004
| Version v1
Journal article
Radiation gamma-annealing of silicon carbide in BOR-60 reactor
Creators
- 1. RNTs Kurchatovskij Inst., Moscow (Russian Federation)
- 2. NIKIEhT im. N.A. Dollezhalya, Moscow (Russian Federation)
Description
Results of irradiation of β-SiC cubic silicon carbide at 400-800 Deg C in different channels of the BOR-60 reactor, where the factor of composition of radiation changes in the 2.3-6.6 range, are discussed. Expansion of the β-SiC crystal lattice in the stage of saturation was taken by measure of radiation damage. Data about the isochrone annealing were used for the investigation into spectrum of annealing activation energy of defects - its blow up in the field of higher or lower energy under γ-radiation. Results were compared with data of the analogous irradiation of silicon carbide in materials technological reactor and BR-10 reactor as well as with data about the γ-radiation effect on other materials and their properties
Abstract (Russian)
Обсуждаются результаты облучения карбида кремния кубической модификации β-SiC при температуре 400-800 град С в разных каналах реактора БОР-60, где фактор состава излучения изменялся в интервале 2.3-6.5. За меру радиационной повреждаемости принималось расширение кристаллической решетки β-SiC в стадии насыщения. Данные об изохронном отжиге использованы для исследования спектра энергии активации отжига дефектов - его размытия в область большей или меньшей энергии под влиянием γ-излучения. Результаты сравниваются с данными аналогичного облучения карбида кремния в материаловедческом реакторе и БР-10 реакторе, а также с данными о влиянии γ-излучения на другие материалы и их свойстваAdditional details
Additional titles
- Original title (Russian)
- Радиационный γ-отжиг карбида кремния, облучённого в реакторе БОР-60
Publishing Information
- Journal Title
- Atomnaya Ehnergiya
- Journal Volume
- 97
- Journal Issue
- 4
- Journal Page Range
- p. 275-280
- ISSN
- 0004-7163
- CODEN
- AENGAB
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 37054749
- Subject category
- S36: MATERIALS SCIENCE; S21: SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS;
- Descriptors DEI
- ANNEALING; BOR-60 REACTOR; CRYSTAL DEFECTS; CUBIC LATTICES; GAMMA RADIATION; IRRADIATION; PHYSICAL RADIATION EFFECTS; SILICON CARBIDES; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K
- Descriptors DEC
- BREEDER REACTORS; CARBIDES; CARBON COMPOUNDS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ENRICHED URANIUM REACTORS; EPITHERMAL REACTORS; EXPERIMENTAL REACTORS; FAST REACTORS; FBR TYPE REACTORS; HEAT TREATMENTS; IONIZING RADIATIONS; LIQUID METAL COOLED REACTORS; LMFBR TYPE REACTORS; POWER REACTORS; RADIATION EFFECTS; RADIATIONS; REACTORS; RESEARCH AND TEST REACTORS; SILICON COMPOUNDS; SODIUM COOLED REACTORS; TEMPERATURE RANGE
Optional Information
- Notes
- 7 refs., 3 figs., 2 tabs.