Published 1995 | Version v1
Miscellaneous Metadata-only

Investigation of misfit dislocation sources in GaAs epitaxial layers

Creators

  • 1. Institute of Electronic Materials Technology, Warsaw (Poland)
  • 2. Institute of Atomic Energy, Swierk (Poland)
  • 3. HASYLAB, DESY, Hamburg (Germany)

Description

no abstract available

Part of:
Abstracts of 2. International School and Symposium on Physics in Materials Science

Additional details

Additional titles

Augmented title (English)
X-ray diffraction method

Publishing Information

Imprint Title
Abstracts of 2. International School and Symposium on Physics in Materials Science
Imprint Pagination
[132 p.].
Journal Page Range
p. SC1.17.

Conference

Title
2. International School and Symposium on Physics in Materials Science.
Dates
17-23 Sep 1995.
Place
Jaszowiec (Poland).

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
29033571
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract, Non-conventional Literature
Descriptors DEI
CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISLOCATIONS; EPITAXY; GALLIUM ARSENIDES; MEETINGS; SYNCHROTRON RADIATION; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BREMSSTRAHLUNG; CHEMICAL COATING; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DEPOSITION; DIFFRACTION; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; LINE DEFECTS; PNICTIDES; RADIATIONS; SCATTERING; SURFACE COATING

Optional Information

Contract/Grant/Project number
KBN grant no. 1130/55