Published May 1993
| Version v1
Journal article
Thermal stability of tungsten nitride (WN) films deposited by ion beam sputtering on gallium arsenide (GaAs) substrates
Description
Tungsten nitride films on gallium arsenide substrates were grown by ion-beam sputtering method. Phase formation was investigated under various deposition conditions using secondary ion mass spectrometry. Formation of tungsten nitride phases was shown to take place even at room temperature. Thermal stability of the films was studied
Additional details
Additional titles
- Original title (Russian)
- Термостабильность плёнок нитрида вольфрама (WN), выращенных ионно-лучевым распылением на арсениде галлия (GaAs)
Publishing Information
- Journal Title
- Fizika i Khimiya Obrabotki Materialov
- Journal Issue
- no.5
- Journal Page Range
- p. 94-99.
- ISSN
- 0015-3214
- CODEN
- FKOMAT
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 25014141
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ARGON IONS; CHEMICAL VAPOR DEPOSITION; FILMS; ION BEAMS; NITROGEN IONS; PHASE STUDIES; SPUTTERING; TUNGSTEN NITRIDES; VAPOR DEPOSITED COATINGS
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; CHEMICAL COATING; COATINGS; DEPOSITION; IONS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS