Published July 2010 | Version v1
Journal article Metadata-only

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

Creators

  • 1. Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan)

Description

The temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy (HVPE) was investigated. N-polarity single-crystal InN layers were successfully grown at temperatures ranging from 400 to 500 C. The a and c lattice constants of InN layers grown at 450 C or below were slightly larger than those of InN layers grown above 450 C due to oxygen incorporation that also increased the carrier concentration. The optical absorption edge of the InN layer decreased from above 2.0 to 0.76 eV when the growth temperature was increased from 450 to 500 C. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200983519

Additional details

Identifiers

DOI
10.1002/pssc.200983519;

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
Journal Volume
7
Journal Issue
7-8
Journal Page Range
p. 2022-2024
ISSN
1610-1642

Conference

Title
8. International conference on nitride semiconductors (ICNS-8)
Dates
18-23 Oct 2009
Place
Jeju (Korea, Republic of)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
41113912
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ABSORPTION SPECTRA; ATMOSPHERIC PRESSURE; CARRIER DENSITY; ELECTRON DIFFRACTION; HYDRIDES; INDIUM NITRIDES; LATTICE PARAMETERS; MONOCRYSTALS; ORIENTATION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION
Descriptors DEC
COHERENT SCATTERING; CORUNDUM; CRYSTAL GROWTH METHODS; CRYSTALS; DIFFRACTION; ELECTRON MICROSCOPY; EPITAXY; HYDROGEN COMPOUNDS; INDIUM COMPOUNDS; MICROSCOPY; MINERALS; NITRIDES; NITROGEN COMPOUNDS; OXIDE MINERALS; PNICTIDES; SCATTERING; SPECTRA; TEMPERATURE RANGE

Optional Information

Notes
With 4 figs., 0 tabs., 9 refs.; SICI: 1862-6351(201007)7:7/8<2022::AID-PSSC200983519>3.0.TX;2-K