Published 1995 | Version v1
Book

Enhancement of surface roughness due to ion implantation

  • 1. Institute of Physics, Bhubaneswar (India)
  • 2. Deutsches Elektronen-Synchrotron, Hamburg (Germany). HASYLAB

Description

Short communication. 2 refs., 2 figs

Part of:
Proceedings of the DAE solid state physics symposium. V. 38C

Additional details

Publishing Information

Publisher
Department of Atomic Energy.
Imprint Place
Mumbai (India)
Imprint Title
Proceedings of the DAE solid state physics symposium. V. 38C
Imprint Pagination
545 p.
Journal Page Range
p. 402.

Conference

Title
38. DAE solid state physics symposium.
Dates
27-31 Dec 1995.
Place
Calcutta (India).

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
28066472
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
COBALT IONS; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; ROUGHNESS; RUTHERFORD SCATTERING; SILICON OXIDES
Descriptors DEC
CHALCOGENIDES; CHARGED PARTICLES; ELASTIC SCATTERING; IONS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; SCATTERING; SILICON COMPOUNDS; SURFACE PROPERTIES

Optional Information