Published 1995
| Version v1
Book
Enhancement of surface roughness due to ion implantation
- 1. Institute of Physics, Bhubaneswar (India)
- 2. Deutsches Elektronen-Synchrotron, Hamburg (Germany). HASYLAB
Description
Short communication. 2 refs., 2 figs
Additional details
Publishing Information
- Publisher
- Department of Atomic Energy.
- Imprint Place
- Mumbai (India)
- Imprint Title
- Proceedings of the DAE solid state physics symposium. V. 38C
- Imprint Pagination
- 545 p.
- Journal Page Range
- p. 402.
Conference
- Title
- 38. DAE solid state physics symposium.
- Dates
- 27-31 Dec 1995.
- Place
- Calcutta (India).
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 28066472
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- COBALT IONS; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; ROUGHNESS; RUTHERFORD SCATTERING; SILICON OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; ELASTIC SCATTERING; IONS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; SCATTERING; SILICON COMPOUNDS; SURFACE PROPERTIES