Effect of temperature on single event upset of TFT SRAM and its space error rate prediction

The temperature (215-353 K) effect on single event upset (SEU) of a 4M commercial SRAM based on thin film transistors manufactured with a 0.15 μm CMOS process was studied. The experimental results show that temperature influences can be ignored on the saturation portion of the cross-sectional curve, and the SEU cross-section increases with temperature on the rising portion of the cross-sectional curve. The influence of temperature on its space error rate prediction was studied utilizing Space Radiation 7.0 software. The simulation results show that SRAM SEU cross-section change with temperature leads to change of the shape of SEU-LET curve, and results in the threshold LET value drift, which affects the space error rate prediction result. (authors)