Published September 16, 1986
| Version v1
Journal article
X-ray study of semiconducting alloys Ga2Te3-In2Se3
Description
Different alloy compositions of (Ga2Te3)/sub 1-x/(In2Se3)/sub x/ with x varying from 0 to 1 at equal intervals of 0.1 were synthesized by heating a stoichiometric proportion of elements to 1100 0C, thorough mixing at this temperature and quenching in water at room temperature. X-ray diffraction patterns show that alloys with 10 to 50 mol% of In2Se3 indicated powder reflections indexible on the cubic cell of Ga2Te3, whereas alloys with high percentage of In2Se3 crystallised in hexagonal lattice. Lattice parameters in dependence on composition are given
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 97
- Journal Issue
- 1
- Series
- Phys. Status Solidi A.
- Journal Page Range
- K5-K7
- ISSN
- 0031-8965
- CODEN
- PSSAB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 18012695
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CHEMICAL PREPARATION; CUBIC LATTICES; GALLIUM TELLURIDES; HEXAGONAL LATTICES; INDIUM SELENIDES; LATTICE PARAMETERS; QUANTITY RATIO; QUENCHING; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIFFRACTION; DISPERSIONS; GALLIUM COMPOUNDS; HEAT TREATMENTS; HOMOGENEOUS MIXTURES; INDIUM COMPOUNDS; MATERIALS; MIXTURES; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; SOLUTIONS; SYNTHESIS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- Short note.