Published 2004 | Version v1
Miscellaneous Metadata-only

Time-resolved photoluminescence of thin AlGaN film in field effect transistor structures

Creators

  • 1. Institute of Electron Technology, Warsaw (Poland)
  • 2. Department of Physics and Measurement Technology (IFM), Linkoeping University, Linkoeping (Sweden)

Description

no abstract available

Part of:
Abstracts book of 8. Electron Technology Conference ELTE 2004

Additional details

Publishing Information

Imprint Title
Abstracts book of 8. Electron Technology Conference ELTE 2004
Imprint Pagination
502 p.
Journal Page Range
p. 334-335

Conference

Title
8. Electron Technology Conference ELTE 2004
Dates
19-22 Apr 2004
Place
Stare Jablonki (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
37004044
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ALUMINIUM COMPOUNDS; BRAGG REFLECTION; FIELD EFFECT TRANSISTORS; GALLIUM COMPOUNDS; GALLIUM NITRIDES; HETEROJUNCTIONS; NITRIDES; PHOTOLUMINESCENCE; SAPPHIRE; SUBSTRATES; THIN FILMS; TIME RESOLUTION
Descriptors DEC
CORUNDUM; EMISSION; FILMS; GALLIUM COMPOUNDS; LUMINESCENCE; MINERALS; NITRIDES; NITROGEN COMPOUNDS; OXIDE MINERALS; PHOTON EMISSION; PNICTIDES; REFLECTION; RESOLUTION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; TIMING PROPERTIES; TRANSISTORS

Optional Information

Notes
2 refs, 1 fig.