Published October 13, 2014 | Version v1
Journal article

Coherent phonon study of (GeTe)l(Sb2Te3)m interfacial phase change memory materials

  • 1. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba 305-8562 (Japan)
  • 2. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573 (Japan)

Description

The time-resolved reflectivity measurements were carried out on the interfacial phase change memory (iPCM) materials ([(GeTe)2(Sb2Te3)4]8 and [(GeTe)2(Sb2Te3)1]20) as well as conventional Ge2Sb2Te5 alloy at room temperature and above the RESET-SET phase transition temperature. In the high-temperature phase, coherent phonons were clearly observed in the iPCM samples while drastic attenuation of coherent phonons was induced in the alloy. This difference strongly suggests the atomic rearrangement during the phase transition in iPCMs is much smaller than that in the alloy. These results are consistent with the unique phase transition model in which a quasi-one-dimensional displacement of Ge atoms occurs for iPCMs and a conventional amorphous-crystalline phase transition takes place for the alloy.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
105
Journal Issue
15
Journal Page Range
p. 151902-151902.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2014 AIP Publishing LLC