Published March 27, 2015 | Version v1
Journal article Metadata-only

Single layer graphene electrodes for quantum dot-light emitting diodes

Creators

  • 1. State Key Laboratory on Integrated Optoelectronics, and College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)
  • 2. State Key Laboratory of Superhard Materials, and College of Physics, Jilin University, Changchun 130012 (China)
  • 3. College of Material Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042 (China)

Description

Single layer graphene was employed as the electrode in quantum dot-light emitting diodes (QD-LEDs) to replace indium tin oxide (ITO). The graphene layer demonstrated low surface roughness, good hole injection ability, and proper work function matching with the poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) layer. Together with the hole transport layer and electron transport layer, the fabricated QD-LED showed good current efficiency and power efficiency, which were even higher than an ITO-based similar device under low current density. The result indicates that graphene can be used as anodes to replace ITO in QD-LEDs. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/26/13/135201

Additional details

Identifiers

DOI
10.1088/0957-4484/26/13/135201;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
26
Journal Issue
13
Journal Page Range
[6 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47078475
Subject category
S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
CURRENT DENSITY; GRAPHENE; INDIUM COMPOUNDS; LAYERS; LIGHT EMITTING DIODES; TIN OXIDES; WORK FUNCTIONS
Descriptors DEC
CARBON; CHALCOGENIDES; ELEMENTS; FUNCTIONS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TIN COMPOUNDS