Influence of high-frequency electromagnetic radiation on photoluminescent and electronic properties of nanocrystalline silicon/monocrystalline silicon systems

Time-resolved photoluminescence (PL) spectra and photovoltage temperature dependences on the nc-Si/p-Si, nc-Si/p-Si. It was discovered that the photovoltage in nc-Si films and the concentration of electron traps in nc-Si films and p-Si substrates were decreased after HF exposure in all structures. the great intensity (7.5W/cm2) of HF field worsens photoluminescent properties up to the total vanishing of PL. The mechanism of the influence of HF field on the properties of the structures investigated is discussed