Published November 1981 | Version v1
Journal article Metadata-only

Influence of outdiffusion of carriers on the energy spectrum of soft x rays in semiconductor detectors

Creators

  • 1. A. F. Ioffe Physicotechnical Institute, Academy of Sciences of the USSR, Leningrad

Description

An analysis is made of the mechanism of outdiffusion of carriers to the surface of a crystal and its influence on the energy spectrum of semiconductor detectors in the soft x-ray range (1--10 keV). Expressions are obtained for calculating accurately the energy spectrum and for estimating the relative area under the tail of the spectrum when the parameters of a crystal are known

Additional details

Publishing Information

Journal Title
Sov. Phys. - Semicond. (Engl. Transl.)
Journal Volume
15
Journal Issue
11
Series
Sov. Phys. - Semicond. (Engl. Transl.).
Journal Page Range
1219-1221

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
14747032
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
CHARGE CARRIERS; DIFFUSION; ENERGY SPECTRA; SEMICONDUCTOR DETECTORS; SOFT X RADIATION; X-RAY DETECTION
Descriptors DEC
ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; RADIATIONS; SPECTRA; X RADIATION