Published 1996
| Version v1
Miscellaneous
Low-dimensional heterostructures of III-V semiconductor compounds produced by MOVPE epitaxy
Description
no abstract available
Additional details
Additional titles
- Augmented title (English)
- GaAs, InP, GaAlAs, InGaAs
Publishing Information
- Imprint Title
- Abstracts of 1. Polish - Korean Symposium on Materials Science
- Imprint Pagination
- 81 p.
- Journal Page Range
- p. 24
Conference
- Title
- 1. Polish - Korean Symposium on Materials Science
- Dates
- 16-20 Dec 1996
- Place
- Warsaw (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 30025347
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM PHOSPHIDES; INTERFACES; MICROELECTRONICS; NONLINEAR OPTICS; SEMICONDUCTOR MATERIALS; SUPERLATTICES; VAPOR PHASE EPITAXY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; OPTICS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR JUNCTIONS