Published June 2017 | Version v1
Journal article Metadata-only

Low temperature plasma-enhanced ALD TiN ultrathin films for Hf0.5Zr0.5O2-based ferroelectric MIM structures

Creators

  • 1. Moscow Institute of Physics and Technology, Institutsky Lane 9, Dolgoprudny, Moscow Region 141700 (Russian Federation)
  • 2. National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoye Shosse 31, 115409 Moscow (Russian Federation)
  • 3. Technological Institute for Superhard and Novel Carbon Materials, Tsentral'naya str. 7a, 142190, Troitsk, Moscow (Russian Federation)

Description

In this work chemical and electrical properties of TiN films, grown by low temperature plasma-enhanced atomic layer deposition (PE-ALD) process from TiCl4 and NH3, were investigated. Electrical resistivity as low as 250 μOhm x cm, as well as the lowest Cl impurity content, was achieved at 320 C. Full-ALD Hf0.5Zr0.5O2-based metal-ferroelectric-metal capacitor with TiN electrodes was fabricated and its electrical properties were investigated. It was also shown that the proposed PE-ALD process provides an early film continuity, which was confirmed by ultrathin fully continuous film growth. Such ultrathin (3 nm) and fully continuous TiN film was also successfully implemented as the top electrode to Hf0.5Zr0.5O2-based ferroelectric capacitor. Angle-resolved X-ray photoelectron spectroscopy (AR-XPS) was used for its thickness determination and a visible wake-up effect in underlying Hf0.5Zr0.5O2 layer was clearly observed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssa.201700056

Additional details

Identifiers

DOI
10.1002/pssa.201700056;

Publishing Information

Journal Title
Physica Status Solidi. A, Applications and Materials Science
Journal Volume
214
Journal Issue
6
Journal Page Range
p. 1-6
ISSN
1862-6300
CODEN
PSSABA

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
48070119
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
AMMONIA; CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; FERROELECTRIC MATERIALS; HAFNIUM COMPOUNDS; IMPURITIES; MIM JUNCTIONS; PLASMA; THICKNESS; THIN FILMS; TITANIUM CHLORIDES; TITANIUM NITRIDES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONATES
Descriptors DEC
CHEMICAL COATING; CHLORIDES; CHLORINE COMPOUNDS; DEPOSITION; DIELECTRIC MATERIALS; DIMENSIONS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; EQUIPMENT; FILMS; HALIDES; HALOGEN COMPOUNDS; HYDRIDES; HYDROGEN COMPOUNDS; MATERIALS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; NITROGEN HYDRIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; PNICTIDES; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPY; SURFACE COATING; TITANIUM COMPOUNDS; TITANIUM HALIDES; TRANSITION ELEMENT COMPOUNDS; TUNNEL JUNCTIONS; ZIRCONIUM COMPOUNDS

Optional Information

Notes
With 6 figs., 1 tab.