Published March 2007 | Version v1
Journal article

Understanding modulated twin transition at the atomic level

  • 1. School of Mechanical Engineering, Shandong University of Technology, Zibo, Shandong 255049 (China)
  • 2. Department of Physics, Acadia University, Wolfville, NS (Canada)
  • 3. National Research Council Canada, Chalk River Laboratories, Chalk River, ON (Canada)
  • 4. Defence Research and Development Canada-Atlantic, Dartmouth, NS (Canada)

Description

The modulated martensitic variants in a Ni-Mn-Ga ferromagnetic shape memory alloy have been characterized in detail by transmission electron microscopy (TEM). Electron diffraction confirms that at room temperature most of the martensite in this alloy exhibits the 5-layer modulated structure. Trace analysis indicates that the self-accommodated variants have a coherent twinning plane of {12-bar 5-bar} relative to the martensitic phase. One of the twin relations was determined to be (12-bar 5-bar)A//(12-bar5-bar)C with [2-bar1-bar0]A//[210]C, revealing the presence of a reflection twin. Based on TEM experimental observations, a model describing the reorientation of the twinned variants on an atomic scale was developed to explain the reversible motion of the boundary. The twin transition between the variants with modulated structure is shown to involve deshuffle on the basal plane of the original variant, atomic displacement parallel to the twin boundary and shuffle again on the basal plane of the product variant

Additional details

Identifiers

DOI
10.1016/j.actamat.2006.10.034;
PII
S1359-6454(06)00759-2;

Publishing Information

Journal Title
Acta Materialia
Journal Volume
55
Journal Issue
5
Journal Page Range
p. 1731-1740
ISSN
1359-6454
CODEN
ACMAFD

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.