Published November 2005
| Version v1
Journal article
The growth of Zn on a Si(1 0 0)-2x1 surface
Creators
- 1. Advanced Science Research Laboratory, Saitama Institute of Technology, 1690 Fusaiji, Okabe, Saitama (Japan) and State Key Laboratory for Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen 361005 (China)
- 2. Advanced Science Research Laboratory, Saitama Institute of Technology, 1690 Fusaiji, Okabe, Saitama (Japan)
Description
Adsorption of Zn atoms on a Si(1 0 0)-2x1 surface was studied by scanning tunneling microscopy at room temperature. Narrow lines are grown perpendicular to the Si-dimer rows of the [1 1 0] direction at low coverage. The narrow line is formed by arraying rectangular Zn3 dots, where a dot is composed of one Zn atom on a Si dimer and the other two in the neighboring two hollow sites. When the Si(1 0 0)-2x1 surface is covered with one monolayer of Zn, a 4x1 structure is established. More deposition of Zn on the 4x1 monolayer grows into three-dimensional Zn islands
Additional details
Identifiers
- DOI
- 10.1016/j.ultramic.2005.06.010;
- PII
- S0304-3991(05)00113-0;
Publishing Information
- Journal Title
- Ultramicroscopy (Amsterdam)
- Journal Volume
- 105
- Journal Issue
- 1-4
- Journal Page Range
- p. 6-11
- ISSN
- 0304-3991
- CODEN
- ULTRD6
Conference
- Title
- 6. international conference on scanning probe microscopy, sensors and nanostructures
- Acronym
- SPM 2004
- Dates
- 24-26 May 2004
- Place
- Beijing (China)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37043107
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ADSORPTION; ATOMS; DIMERS; SCANNING TUNNELING MICROSCOPY; SURFACE COATING; SURFACES; TEMPERATURE RANGE 0273-0400 K; ZINC
- Descriptors DEC
- DEPOSITION; ELEMENTS; METALS; MICROSCOPY; SORPTION; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.