Published June 1997
| Version v1
Journal article
Metallization induced band bending of SrTiO3(100) and Ba0.7Sr0.3TiO3
- 1. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
Description
We have investigated the interaction of Pt with single-crystal SrTiO3(001) and polycrystalline Ba0.7Sr0.3TiO3 thin films using photoemission spectroscopies. Significant band bending is caused by interface formation, determining the Schottky barrier height. We have depth profiled the band bending for Ba0.7Sr0.3TiO3 thin films, giving a direct measurement of the depletion depth and built-in potential. copyright 1997 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 70
- Journal Issue
- 24
- Journal Page Range
- p. 3227-3229.
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 28072555
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BARIUM COMPOUNDS; ELECTRONIC STRUCTURE; INTERFACES; MONOCRYSTALS; PHOTOEMISSION; PLATINUM; SCHOTTKY BARRIER DIODES; STRONTIUM COMPOUNDS; STRONTIUM TITANATES; THIN FILMS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CRYSTALS; ELEMENTS; EMISSION; FILMS; METALS; OXYGEN COMPOUNDS; PLATINUM METALS; SECONDARY EMISSION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS