Published August 10, 1982 | Version v1
Journal article Metadata-only

ODMR investigation of the Psub(Ga) antisite defect in GaP

Creators

  • 1. Hull Univ. (UK). Dept. of Physics
  • 2. Naval Research Lab., Washington, DC (USA)

Description

ODMR investigations of as-grown and electron-irradiated GaP confirm that the Psub(Ga) antisite defect behaves, in its singly ionised state P4+sub(Ga), as an electron trap in direct competition with band edge recombination processes. A broad photoluminescence band peaking at 1.1eV shows triplet (S=1) ODMR which is associated with the two-electron P3+sub(Ga) state of the antisite. The triplet excited state has <111> symmetry and is formed by spin-dependent electron transfer from shallow donors to the P4+sub(Ga) antisite. (author)

Additional details

Publishing Information

Journal Title
J. Phys., C (London). Solid State Phys.
Journal Volume
15
Journal Issue
22
Series
J. Phys., C (London). Solid State Phys.
Journal Page Range
L723-L728
ISSN
0022-3719

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
14727504
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTAL DEFECTS; ELECTRON TRANSFER; ELECTRONIC STRUCTURE; ELECTRONS; EXCITED STATES; GALLIUM PHOSPHIDES; MAGNETIC RESONANCE; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; RECOMBINATION; SPIN; SYMMETRY; TRAPS; TRIPLETS; VISIBLE RADIATION
Descriptors DEC
ANGULAR MOMENTUM; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ENERGY LEVELS; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; LUMINESCENCE; MULTIPLETS; PARTICLE PROPERTIES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; RADIATION EFFECTS; RADIATIONS; RESONANCE