Published 1978
| Version v1
Journal article
The behaviour of dopants and formation of p-n junctions in Cdsub(x)Hgsub(1-x)Te having different molar composition
Description
The methods of doping Cdsub(x)Hgsub(1-x)Te and the data on the behaviour of various dopants in this semiconductor for different molar compositions are presented. The processes of p-n junctions formation by the methods of changing the material stoichiometry and by doping in mercury vapours are described in detail. (author)
Additional details
Publishing Information
- Journal Title
- Mater. Sci.
- Journal Volume
- 4
- Journal Issue
- 3
- Series
- Mater. Sci.
- Journal Page Range
- 103-109
- ISSN
- 0137-1339
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 12634366
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- ANNEALING; CADMIUM TELLURIDES; CHEMICAL COMPOSITION; CHEMICAL PREPARATION; DIFFUSION; ELECTRIC CONDUCTIVITY; HALL EFFECT; MERCURY; MERCURY TELLURIDES; P-N JUNCTIONS; TEMPERATURE DEPENDENCE; VAPORS
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; ELECTRICAL PROPERTIES; ELEMENTS; FLUIDS; GASES; HEAT TREATMENTS; MERCURY COMPOUNDS; METALS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SYNTHESIS; TELLURIDES; TELLURIUM COMPOUNDS