Transparent conductivity modulation of ZnO by group-IVA doping
Creators
- 1. NOVITAS, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Republic of (Singapore)
- 2. College of Materials Science and Engineering, Jilin University, Changchun 130012 (China)
Description
Highlights: Group-IVA doped ZnO were investigated by first principle calculations. For group-IVA doped ZnO, Si doped ZnO has higher transmittance in visible region and UV region. Intraband transition causes the reduction of visible region transmittance. We examined the effect of group-IVA doping on the electronic structure and transmittance of ZnO using first-principle calculations. All these doped ZnO materials are found to perform n-type conductive behavior. Si-doped ZnO and Pb-doped ZnO are found to have larger optical band gap than those of Ge-doped ZnO and Sn-doped ZnO. The transmittance of Si-doped ZnO is found to be high in both UV and visible region. The enhancement of UV region transmittance can be attributed to the enhanced optical band gap, while the reduction of visible region transmittance is due to the intraband optical transition.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.cplett.2016.02.033Additional details
Identifiers
- DOI
- 10.1016/j.cplett.2016.02.033;
- PII
- S0009261416300513;
Publishing Information
- Journal Title
- Chemical Physics Letters
- Journal Volume
- 649
- Journal Page Range
- p. 78-83
- ISSN
- 0009-2614
- CODEN
- CHPLBC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51123411
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY-LEVEL TRANSITIONS; GERMANIUM; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier B.V. All rights reserved.