Fabrication of SiC nanowire thin-film transistors using dielectrophoresis

The selection of solvents for SiC nanowires (NWs) in a dielectrophoretic process is discussed theoretically and experimentally. From the viewpoints of dielectrophoresis force and torque, volatility, as well as toxicity, isopropanol (IPA) is considered as a proper candidate. By using the dielectrophoretic process, SiC NWs are aligned and NW thin films are prepared. The densities of the aligned SiC NWs are 2 μm−1, 4 μm−1, 6 μm−1, which corresponds to SiC NW concentrations of 0.1 μg/μL, 0.3 μg/μL and 0.5 μg/μL, respectively. Thin-film transistors are fabricated based on the aligned SiC NWs of 6 μm−1. The mobility of a typical device is estimated to be 13.4 cm2/(V·s). (semiconductor devices)