Published 1990 | Version v1
Journal article Metadata-only

Change in the characteristics of Schottky diodes and Si-base p-n junctions irradiated with α-particles

Creators

  • 1. L'vovskij Gosudarstvennyj Univ., Lvov (Ukraine)

Description

The purpose of the paper - to study the effect of different dose α-particle irradiation on current-voltage characteristics of Schottky barriers and silicon base p-n junctions. It was found that current-voltage characteristics of all samples didn't change sufficiently after irradiation

Additional details

Additional titles

Original title (Russian)
Изменение характеристик диодов Шоттки и p-n-переходов на основе кремния под действием облучения α-частицами

Publishing Information

Journal Title
Vyisnik L'vyivs'kogo Unyiversitetu. Seriya Fyizyichna. Fyizyika Kondensovanikh Sistem
Journal Issue
no.23
Series
Vyisn. L'vyiv. Unyiv., Ser. Fyiz., Fyiz. Kondens. Sist.
CODEN
VLUSE

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
23052068
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALPHA BEAMS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; MEV RANGE 01-10; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SILICON
Descriptors DEC
BEAMS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY RANGE; HELIUM 4 BEAMS; ION BEAMS; MEV RANGE; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS