Published October 1996
| Version v1
Journal article
Formation of photosensitivity profile in bulk CdS single crystals by the action of external electric field
Creators
- 1. AN Ukrainskoj SSR, Kiev (Ukraine). Inst. Poluprovodnikov
Description
A method for forming photoconductivity distribution in CdS crystal under external electric fields is proposed. The method allows to control the width of the region purified of mobile donor defects. 13 refs.; 2 figs
Additional details
Additional titles
- Original title (Russian)
- Формирование профиля фоточувствительности в об
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 30
- Journal Issue
- 10
- Journal Page Range
- p. 1884-1888.
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 28048977
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM SULFIDES; CARRIER DENSITY; CHARGE CARRIERS; CONCENTRATION RATIO; ELECTRIC FIELDS; MONOCRYSTALS; PHOTOSENSITIVITY; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; MATERIALS; SENSITIVITY; SULFIDES; SULFUR COMPOUNDS