Published 1993
| Version v1
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Changed of the working capacity of CMOS integrated circuits under ionizing radiations effect of low and high dose rate
Creators
Description
Results of experimental investigations into the working capacity of different types of integrated CMOS circuits under effect of electron and gamma radiation are presented. Methods for evaluating IC CMOS under low irradiation intensity using the microcircuit testing under hugh intensity or at increased temperature with regard to the processes of parameter reconstruction after irradiation are proposed
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28076638.pdf
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Additional details
Additional titles
- Original title (Russian)
- Изменения работоспособности КМОП-интегральных микросхем при воздействии ионизирующих излучений с низкой и высокой интенсивностью
Publishing Information
- Publisher
- TsNII upravleniya ehkonomiki i informatsii.
- Imprint Place
- Moscow (Russian Federation)
- Imprint Title
- Problems of nuclear science and technology. Scientific-technical collection
- Imprint Pagination
- 139 p.
- Journal Issue
- no.2-3
- Series
- Fizika radiatsionnogo vozdejstviya na radioehlektronnuyu apparaturu.
- Journal Page Range
- p. 32-39.
- Report number
- INIS-RU--430
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 28076638
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ANNEALING; INTEGRATED CIRCUITS; PHYSICAL RADIATION EFFECTS; SYSTEM FAILURE ANALYSIS
- Descriptors DEC
- ELECTRONIC CIRCUITS; HEAT TREATMENTS; RADIATION EFFECTS; SYSTEMS ANALYSIS
Optional Information
- Notes
- Imprint:Voprosy atomnoj nauki i tekhniki. Nauchno-tekhnicheskij sbornik.