Direct evidence of Cr-structure defect-oxygen interaction in ion-implanted GaAs

The redistribution of Cr in GaAs implanted with either Ga and As, or Ga, As and O and subsequently furnace annealed was studied by secondary ion mass spectrometry. The depth distribution of the residual damage was obtained by cross-sectional transmission electron microscopy. At annealing temperatures of <= 6000C, there was a one to one depth correlation between the positions of the damage layers and peaks in the atomic profile of Cr. However, at annealing temperatures of >= 8000C such correlations were complicated by oxidation effects. (author)