Published November 1973
| Version v1
Journal article
MOS threshold shifting by ion implantation
Description
no abstract available
Additional details
Identifiers
Publishing Information
- Journal Title
- Solid-State Electronics
- Journal Volume
- 16
- Journal Issue
- 11
- Series
- Solid-State Electron.
- Journal Page Range
- 1217-1232
- ISSN
- 0038-1101
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 5115940
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; BORON; CONTROL; CRYSTAL DOPING; ELECTRIC POTENTIAL; ELECTRODES; HIGH TEMPERATURE; ION IMPLANTATION; JUNCTION TRANSISTORS; KEV RANGE 10-100; LAYERS; MOS TRANSISTORS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PERFORMANCE; TRACE AMOUNTS
- Descriptors DEC
- ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; KEV RANGE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SEMIMETALS; TRANSISTORS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent