Published July 22, 2005 | Version v1
Journal article

Structural and optical properties of rutile and anatase TiO2 thin films: Effects of Co doping

  • 1. Department of Physics and Center for Optoelectronic and Microwave Devices, Konkuk University, Seoul 143-701 (Korea, Republic of)

Description

Pure and Co-doped TiO2 thin films were grown on Al2O3(0001) substrates by reactive radio-frequency magnetron sputtering and sol-gel method. Rutile TiO2 films oriented to the a-axis of the tetragonal structure were obtained by the sputtering while polycrystalline anatase TiO2 films were obtained by the sol-gel method. Post-annealing of the deposited films in the air at 800 deg. C resulted in an improvement of the crystalline quality for both the rutile and anatase films. For Co doping up to 15 at.% the sputter-grown films maintained the a-axis-oriented rutile structure with the same lattice constant as in the pure TiO2 film. Optical properties of the rutile and anatase TiO2 films were measured by spectroscopic ellipsometry at room temperature in the 1.5-5 eV photon energy region. Band-gap energies of the rutile and anatase TiO2 films are determined to be 3.25 and 3.75 eV, respectively. The band-gap energy of the Co-doped rutile TiO2 films is found to increase with increasing Co composition

Additional details

Identifiers

DOI
10.1016/j.tsf.2005.01.039;
PII
S0040-6090(05)00060-X;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
484
Journal Issue
1-2
Journal Page Range
p. 34-38
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.