Structural and optical properties of rutile and anatase TiO2 thin films: Effects of Co doping
Creators
- 1. Department of Physics and Center for Optoelectronic and Microwave Devices, Konkuk University, Seoul 143-701 (Korea, Republic of)
Description
Pure and Co-doped TiO2 thin films were grown on Al2O3(0001) substrates by reactive radio-frequency magnetron sputtering and sol-gel method. Rutile TiO2 films oriented to the a-axis of the tetragonal structure were obtained by the sputtering while polycrystalline anatase TiO2 films were obtained by the sol-gel method. Post-annealing of the deposited films in the air at 800 deg. C resulted in an improvement of the crystalline quality for both the rutile and anatase films. For Co doping up to 15 at.% the sputter-grown films maintained the a-axis-oriented rutile structure with the same lattice constant as in the pure TiO2 film. Optical properties of the rutile and anatase TiO2 films were measured by spectroscopic ellipsometry at room temperature in the 1.5-5 eV photon energy region. Band-gap energies of the rutile and anatase TiO2 films are determined to be 3.25 and 3.75 eV, respectively. The band-gap energy of the Co-doped rutile TiO2 films is found to increase with increasing Co composition
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2005.01.039;
- PII
- S0040-6090(05)00060-X;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 484
- Journal Issue
- 1-2
- Journal Page Range
- p. 34-38
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37019617
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM OXIDES; ANNEALING; DOPED MATERIALS; ELLIPSOMETRY; EV RANGE 01-10; LATTICE PARAMETERS; MAGNETRONS; OPTICAL PROPERTIES; POLYCRYSTALS; RADIOWAVE RADIATION; RUTILE; SOL-GEL PROCESS; SPUTTERING; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 1000-4000 K; THIN FILMS; TITANIUM OXIDES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; ELECTROMAGNETIC RADIATION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ENERGY RANGE; EQUIPMENT; EV RANGE; FILMS; HEAT TREATMENTS; MATERIALS; MEASURING METHODS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; RADIOACTIVE MATERIALS; RADIOACTIVE MINERALS; TEMPERATURE RANGE; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.