X-ray diffraction line profile analysis for defect study in Cu-1 wt.% Cr-0.1 wt.% Zr alloy
- 1. Advanced Materials Characterisation Laboratory, Nuclear Fuel Complex, Hyderabad 500 062 (India)
- 2. Materials Science Division, Bhabha Atomic Research Center, Trombay, Mumbai 400 094 (India)
Description
X-ray line profile analysis (LPA) has been used for microstructural analysis of a Cu-1 wt.% Cr-0.1 wt.% Zr alloy. Using this technique, the stacking fault probability (SFP) and stacking fault energy (SFE) has been determined for the pure Cu and the Cu-1 wt.% Cr-0.1 wt.% Zr alloy. It is observed that there is an increase in the stacking fault probability (and corresponding decrease in stacking fault energy) in case of the alloy. The increased formation of faulted regions in the Cu-1 wt.% Cr-0.1 wt.% Zr alloy is supported by the observation of extended dislocation nodes and fringe contrast due to staking faults under TEM, and higher work hardening rate in the tension test. The high thermal fatigue resistance of this alloy is attributed to decrease in the stacking fault energy by addition of Cr and Zr to Cu
Additional details
Identifiers
- DOI
- 10.1016/j.matchar.2004.09.009;
- PII
- S1044-5803(04)00212-8;
Publishing Information
- Journal Title
- Materials Characterization
- Journal Volume
- 54
- Journal Issue
- 2
- Journal Page Range
- p. 131-140
- ISSN
- 1044-5803
- CODEN
- MACHEX
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37057320
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALLOYS; DEFECTS; DISLOCATIONS; PROBABILITY; STACKING FAULTS; STRAIN HARDENING; THERMAL FATIGUE; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; FATIGUE; HARDENING; IONIZING RADIATIONS; LINE DEFECTS; MECHANICAL PROPERTIES; MICROSCOPY; RADIATIONS; SCATTERING
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.