Published December 1990
| Version v1
Journal article
SEU and latchup tolerant advanced CMOS technology
Creators
- 1. Aerospace Corp., Los Angeles, CA (USA). Space Sciences Lab.
- 2. National Semiconductor, South Portland, ME (USA)
Description
Selected microcircuits were tested for heavy ion induced single event upset (SEU) and latchup. The devices showed no signs of heavy ion induced latchup for LET values up to 120 MeV/(mg/cm2). SEU LET thresholds varied within a rather narrow range of 40 to 60 MeV/(mg/cm2). The test results suggest that FACT devices will exhibit higher tolerances to the cosmic ray environment than functionally similar microcircuits fabricated in HC/HCT, ALS, or LS technologies
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 37
- Journal Issue
- 6
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 1869-1875
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- 27. IEEE annual conference on nuclear and space radiation effects.
- Dates
- 16-20 Jul 1990.
- Place
- Reno, NV (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22056414
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COSMIC RADIATION; FABRICATION; HEAVY IONS; MICROELECTRONIC CIRCUITS; PERFORMANCE TESTING; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- CHARGED PARTICLES; ELECTRONIC CIRCUITS; IONIZING RADIATIONS; IONS; RADIATION EFFECTS; RADIATIONS; TESTING
Optional Information
- Secondary number(s)
- CONF-900723--.