Published July 2016 | Version v1
Journal article

Hydrothermally synthesized SnO2-graphene composites for H2 sensing at low operating temperature

  • 1. College of Science, China University of Petroleum, Qingdao, Shandong 266580 (China)
  • 2. Key Laboratory of New Energy Physics & Materials Science in Universities of Shandong, China University of Petroleum, Qingdao, Shandong 266580 (China)

Description

Graphical abstract: We synthesized the flower-like SnO2 microspheres and SnO2-graphene (S–G) composites with different GN contents through a simple one-pot hydrothermal method. The S–G composite with optimum GN contents exhibits the highest H2 sensing response of 87.2 at 150 °C, which is about 70 times higher than that of pure SnO2. - Highlights: • SnO2-graphene (S–G) composites were synthesized by one-pot hydrothermal method. • Compared with pure SnO2, S–G composites display much better H2 sensing performance. • The excellent H2 sensing performance was obtained at low operating temperature of 150 °C. • H2 sensing mechanisms of S–G composites have been discussed in view of resistance change. - Abstract: The flower-like SnO2 and a series of SnO2-graphene (S–G) composites have been synthesized through a simple one-pot hydrothermal method. The as-prepared products were characterized by XRD, FESEM, TEM, BET, XPS, and Raman spectroscopy. The results clearly revealed that the three-dimensional flower-like SnO2 hierarchical structure was destroyed by graphene nanosheets. The possible growth models for flower-like SnO2 and S–G composites were proposed based on the microstructure characterizations. Furthermore, the H2 sensing responses of all samples were investigated at low operating temperatures (OT) between 30 and 180 °C. The results indicate that the S–G-2-based sensor exhibits the excellent H2 sensing response of 87.2 at a relatively low OT of 150 °C, which is about 70 times higher than that of pure SnO2. Mechanism of H2 sensing of S–G composite has been discussed in terms of resistance change, which is influenced by the Schottky barrier at the interface of S–G composites.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.mseb.2015.10.009

Additional details

Identifiers

DOI
10.1016/j.mseb.2015.10.009;
PII
S0921-5107(15)00233-0;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
209
Journal Page Range
p. 37-44
ISSN
0921-5107
CODEN
MSBTEK

Optional Information

Copyright
Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.