Element-specific electronic structure of Mn dopants and ferromagnetism of (Zn,Mn)O thin films
Creators
- 1. Department of Physics, Surface Physics Laboratory (National Key Laboratory) and Synchrotron Radiation Research Center of Fudan University, 220 Handan Road, Shanghai 200433 (China)
- 2. Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, SK, S7N 5E2 (Canada)
- 3. Institute for Molecules and Materials, Radboud University, 6525 ED Nijmegen (Netherlands)
- 4. Institute of Metal Physics, Russian Academy of Sciences-Ural Division, Yekaterinburg 620219 (Russian Federation)
Description
Element-specific electronic structure of (Zn,Mn)O thin films with various Mn concentrations has been investigated using X-ray absorption and emission spectroscopy. According to comparison between the experimental spectra and the density functional theory calculations (partial density of states and exchange interactions for various Mn defect configurations), the substitutional Mn impurities do not induce ferromagnetism in (Zn,Mn)O samples. The ferromagnetic properties can be obtained when defect configurations consisting of both substitutional and interstitial Mn atoms are present. The ferromagnetism in ZnO-based magnetic semiconductors is favored to be Ruderman-Kittel-Kasuya-Yoshida type and the established theoretical model is in a good agreement with the X-ray spectroscopic measurements.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2009.12.100Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2009.12.100;
- PII
- S0040-6090(09)02125-7;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 518
- Journal Issue
- 10
- Journal Page Range
- p. 2825-2829
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42054757
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION; COMPARATIVE EVALUATIONS; CONFIGURATION; DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; EXCHANGE INTERACTIONS; FERROMAGNETISM; IMPURITIES; INTERSTITIALS; MAGNETIC SEMICONDUCTORS; MANGANESE OXIDES; SOFT X RADIATION; SPECTRA; THIN FILMS; ZINC OXIDES
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; EVALUATION; FILMS; INTERACTIONS; IONIZING RADIATIONS; MAGNETISM; MANGANESE COMPOUNDS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; SORPTION; SPECTROSCOPY; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS; X RADIATION; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.