Published March 1, 2010 | Version v1
Journal article

Element-specific electronic structure of Mn dopants and ferromagnetism of (Zn,Mn)O thin films

  • 1. Department of Physics, Surface Physics Laboratory (National Key Laboratory) and Synchrotron Radiation Research Center of Fudan University, 220 Handan Road, Shanghai 200433 (China)
  • 2. Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, SK, S7N 5E2 (Canada)
  • 3. Institute for Molecules and Materials, Radboud University, 6525 ED Nijmegen (Netherlands)
  • 4. Institute of Metal Physics, Russian Academy of Sciences-Ural Division, Yekaterinburg 620219 (Russian Federation)

Description

Element-specific electronic structure of (Zn,Mn)O thin films with various Mn concentrations has been investigated using X-ray absorption and emission spectroscopy. According to comparison between the experimental spectra and the density functional theory calculations (partial density of states and exchange interactions for various Mn defect configurations), the substitutional Mn impurities do not induce ferromagnetism in (Zn,Mn)O samples. The ferromagnetic properties can be obtained when defect configurations consisting of both substitutional and interstitial Mn atoms are present. The ferromagnetism in ZnO-based magnetic semiconductors is favored to be Ruderman-Kittel-Kasuya-Yoshida type and the established theoretical model is in a good agreement with the X-ray spectroscopic measurements.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2009.12.100

Additional details

Identifiers

DOI
10.1016/j.tsf.2009.12.100;
PII
S0040-6090(09)02125-7;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
518
Journal Issue
10
Journal Page Range
p. 2825-2829
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.