Published July 8, 2011 | Version v1
Journal article

Conductance histogram evolution of an EC-MCBJ fabricated Au atomic point contact

  • 1. State Key Laboratory of Physical Chemistry of Solid Surfaces and Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005 (China)
  • 2. Center for Bioelectronics and Biosensors, Biodesign Institute, Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-6206 (United States)
  • 3. Micro-Electro-Mechanical Systems Research Center, Pen-Tung Sah Micro-Nano Technology Institute, Xiamen University, Xiamen 361005 (China)

Description

This work presents a study of Au conductance quantization based on a combined electrochemical deposition and mechanically controllable break junction (MCBJ) method. We describe the microfabrication process and discuss improved features of our microchip structure compared to the previous one. The improved structure prolongs the available life of the microchip and also increases the success rate of the MCBJ experiment. Stepwise changes in the current were observed at the last stage of atomic point contact breakdown and conductance histograms were constructed. The evolution of 1G0 peak height in conductance histograms was used to investigate the probability of formation of an atomic point contact. It has been shown that the success rate in forming an atomic point contact can be improved by decreasing the stretching speed and the degree that the two electrodes are brought into contact. The repeated breakdown and formation over thousands of cycles led to a distinctive increase of 1G0 peak height in the conductance histograms, and this increased probability of forming a single atomic point contact is discussed.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/22/27/275313

Additional details

Identifiers

DOI
10.1088/0957-4484/22/27/275313;
PII
S0957-4484(11)78009-6;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
22
Journal Issue
27
Journal Page Range
[9 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43026716
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
BREAKDOWN; ELECTRIC CONTACTS; ELECTRODEPOSITION; ELECTRODES; HEIGHT; NANOSTRUCTURES
Descriptors DEC
DEPOSITION; DIMENSIONS; ELECTRICAL EQUIPMENT; ELECTROLYSIS; EQUIPMENT; LYSIS; SURFACE COATING