Effect of radiation on photoelectric parameters of Ge-Si-base photoconverters

Results of investigation into effect of 5 MeV energy electron irradiation and 200 keV energy proton irradiation on photoelectrical parameters of 88 at.%Ge+12 at.%Si solid solution - base photoconverters are presented. High stability of photoflow in Ge1-xSix-base photoconverters under the irradiation effect, which results from low rate of radiation defect introduction in monocrystals, is shown. High radiation stability of main photoenergy parameters in combination with high efficiency of long-wave solar radiation transformation provide additional advantages for application of Ge-Si solid solution-base photoconverters