Published March 4, 2002
| Version v1
Journal article
Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors
Creators
- Luo, B.1, 2, 3, 4
- Johnson, J.W.1, 2, 3, 4
- Kim, J.1, 2, 3, 4
- Mehandru, R.M.1, 2, 3, 4
- Ren, F.1, 2, 3, 4
- Gila, B.P.1, 2, 3, 4
- Onstine, A.H.1, 2, 3, 4
- Abernathy, C.R.1, 2, 3, 4
- Pearton, S.J.1, 2, 3, 4
- Baca, A.G.1, 2, 3, 4
- Briggs, R.D.1, 2, 3, 4
- Shul, R.J.1, 2, 3, 4
- Monier, C.1, 2, 3, 4
- Han, J.1, 2, 3, 4
- 1. Yale University, New Haven, Connecticut 06520 (United States)
- 2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- 3. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- 4. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
Description
Unpassivated AlGaN/GaN high-electron-mobility transistors show significant gate lag effects due to the presence of surface states in the region between the gate and drain contact. Low-temperature (100 deg. C) layers of MgO or Sc2O3 deposited by plasma-assisted molecular-beam epitaxy are shown to effectively mitigate the collapse in drain current through passivation of the surface traps. These dielectrics may have advantages over the more conventional SiNX passivation in terms of long-term device stability
Additional details
Identifiers
- DOI
- 10.1063/1.1455692;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 80
- Journal Issue
- 9
- Journal Page Range
- p. 1661-1663
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35011252
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; ELECTRON MOBILITY; GALLIUM COMPOUNDS; GRADED BAND GAPS; MAGNESIUM OXIDES; MOLECULAR BEAM EPITAXY; PASSIVATION; SCANDIUM OXIDES; SEMICONDUCTOR MATERIALS; SURFACE TREATMENTS; TRANSISTORS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; EPITAXY; MAGNESIUM COMPOUNDS; MATERIALS; MOBILITY; OXIDES; OXYGEN COMPOUNDS; PARTICLE MOBILITY; SCANDIUM COMPOUNDS; SEMICONDUCTOR DEVICES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2002 American Institute of Physics.